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150ma rf uldo regulator ap2202 data sheet 1 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited general description the ap2202 is a 150ma uldo regulator which pro- vides very low noise, ultra low dropout voltage (typically 165mv at 150ma), very low standby current (1 a maximum) and excellent power supply ripple rejection (psrr 75db at 100hz) in battery powered applications, such as handsets and pdas and in noise sensitive applications, such as rf electronics. the ap2202 also features logic compatible enable/ shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as we ll as reversed-battery pro- tection. the ap2202 has adjustable, 2.5v, 2.6v, 2.8v, 3.0v and 3.3v versions. the ap2202 is available in space saving sot-23-5 and sot-89 packages. features up to 150ma output current low standby current low dropout voltage: v drop =165mv at 150ma high output accuracy: 1% good ripple rejection ability: 75db at 100hz and i out =100 a tight load and line regulation low temperature coefficient over current protection thermal protection reverse-battery protection logic-controlled enable applications cellular phones cordless phones digital still cameras wireless communicators pdas / palmtops pc mother board consumer electronics sot-23-5 figure 1. package types of ap2202 sot-89
150ma rf uldo regulator ap2202 data sheet 2 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited figure 2. pin configuration of ap2202 (top view) (sot-23-5) k package pin configuration byp gnd en v out v in 1 3 4 5 2 adj gnd en v out v in 1 3 4 5 2 (sot-89) r package 1 2 3 v out gnd (tab) v in pin description pin number pin name function sot-23-5 sot-89 13 v in input voltage 2 2 gnd ground (tab for sot-89) 3 en enable input: cmos or ttl compat ible input. logic high=enable, logic low=shutdown 4 byp/adj bypass capacitor for lo w noise operation/adjust output 51 v out regulated output voltage
150ma rf uldo regulator ap2202 data sheet 3 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited + - bandgap ref. current limit thermal shutdown v in en gnd v out adj figure 3. functional block diagram of ap2202 + - bandgap ref. current limit thermal shutdown v in byp en gnd v out functional block diagram 1 2 3 4 5 adjustable regulator fixed regulator a (b) a for sot-23-5 b for sot-89 1 (3) 2 (2) 3 4 5 (1)
150ma rf uldo regulator ap2202 data sheet 4 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited package temperature range part number marking id packing type lead free green lead free green sot-23-5 -40 to 125 o c ap2202k-adjtre1 AP2202K-ADJTRG1 e2c g2c tape & reel ap2202k-2.5tre1 ap2202k-2.5trg1 e2d g2d tape & reel ap2202k-2.6tre1 ap2202k-2.6trg1 e2e g2e tape & reel ap2202k-2.8tre1 ap2202k-2.8trg1 e2g g2g tape & reel ap2202k-3.0tre1 ap2202k-3.0trg1 e2i g2i tape & reel ap2202k-3.3tre1 ap2202k-3.3trg1 e2l g2l tape & reel sot-89 -40 to 125 o c ap2202r-3.3tre1 ap2202r-3.3trg1 e22b g22b tape & reel ordering information circuit type package k: sot-23-5 2.5: fixed output 2.5v e1: lead free g1: green ap2202 - tr: tape and reel 2.6: fixed output 2.6v 2.8: fixed output 2.8v 3.0: fixed output 3.0v 3.3: fixed output 3.3v adj: adjustable output r: sot-89 bcd semiconductor's pb-free produc ts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages.
150ma rf uldo regulator ap2202 data sheet 5 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited parameter symbol value unit supply input voltage v in 15 v enable input voltage v en 15 v power dissipation p d internally limited (thermal protection) w lead temperature (s oldering, 10sec) t lead 260 o c junction temperature t j 150 o c storage temperature t stg -65 to 150 o c esd (machine model) 200 v thermal resistance (no heatsink) ja sot-23-5 200 o c/w sot-89 165 note 1: stresses greater than those listed unde r "absolute maximum ratings" may caus e permanent damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions " is not implied. exposure to "absol ute maximum ratings" for extended periods may affect device reliability. absolute maximum ratings (note 1) parameter symbol min max unit supply input voltage v in 2.5 13.2 v enable input voltage v en 0 13.2 v operating junction temperature t j -40 125 o c recommended operating conditions
150ma rf uldo regulator ap2202 data sheet 6 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited parameter symbol condi tions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c line regulation v rline v in = v out + 1v to 13.2v 0.004 0.012 %/v 0.05 load regulation (note 4) v rload i out =0.1ma to 150ma 0.02 0.2 % 0.5 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =0 a 95 130 a 150 v en 2.0v, i out =100 a 98 140 160 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =100ma 600 1000 1500 v en 2.0v, i out =150ma 1300 1900 2500 ripple rejection psr r frequency=100hz, i out =100 a75 db current limit i limit v out =0v 320 550 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low vo l t a g e v il regulator shutdown 0.4 v 0.18 hz nv / v in =v out +1v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified. electrical characteristics ap2202-adj electrical characteristics
150ma rf uldo regulator ap2202 data sheet 7 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited electrical characteristics (continued) note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the wors t case voltage change divi ded by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycle pulse testing. parts are tested for load regulation in the load range from 0.1ma to 150ma. changes in output voltage due to heating effects are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differentia l at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is th e regulator quiescent current pl us pass transistor base current . the total current drawn from t he supply is the sum of the load current plus the ground pin current. ap2202-adj electrical characteristics parameter symbol conditions min typ max unit enable input logic-high vo l t a g e v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v ih 2.0v 5 20 a v ih 2.0v 25 thermal resistance jc sot-23-5 63.4 o c/w sot-89 50 v in =v out +1v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 8 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 48 ppm/ o c line regulation v rline v in = 3.5v to 13.2v 13 mv 13 load regulation (note 4) v rload i out =0.1ma to 150ma 1 5 mv 13 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =0 a 95 130 a 150 v en 2.0v, i out =100 a 98 140 160 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =100ma 600 1000 1500 v en 2.0v, i out =150ma 1300 1900 2500 ripple rejection psrr frequency=100hz, i out =100 a75 db current limit i limit v out =0v 320 550 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low vo l t a g e v il regulator shutdown 0.4 v 0.18 hz nv / ap2202-2.5 electrical characteristics electrical characteristics (continued) v in =3.5v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 9 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited electrical characteristics (continued) ap2202-2.5 electrical characteristics parameter symbol conditions min typ max unit enable input logic-high vo l t a g e v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v ih 2.0v 5 20 a v ih 2.0v 25 thermal resistance jc sot-23-5 63.4 o c/w sot-89 50 note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the wors t case voltage change divi ded by the total temperature range. note 4: regulation is measured at constant junction temperature using low duty cycle pulse testing. parts are tested for load r eg- ulation in the load range from 0.1ma to 150ma. changes in output voltage due to he ating effects are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. v in =3.5v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 10 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 46 ppm/ o c line regulation v rline v in = 3.6v to 13.2v 13 mv 13 load regulation (note 4) v rload i out =0.1ma to 150ma 1 6 mv 14 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =0 a 95 130 a 150 v en 2.0v, i out =100 a 98 140 160 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =100ma 600 1000 1500 v en 2.0v, i out =150ma 1300 1900 2500 ripple rejection psrr frequency=100hz, i out =100 a75 db current limit i limit v out =0v 320 550 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low voltage v il regulator shutdown 0.4 v 0.18 hz nv / ap2202-2.6 electrical characteristics electrical characteristics (continued) v in =3.6v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 11 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited electrical characteristics (continued) ap2202-2.6 electrical characteristics parameter symbol conditions min typ max unit enable input logic-high vo l t a g e v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v ih 2.0v 5 20 a v ih 2.0v 25 thermal resistance jc sot-23-5 63.4 o c/w sot-89 50 note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 150ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. v in =3.6v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 12 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 42.8 ppm/ o c line regulation v rline v in = 3.8v to 13.2v 14 mv 14 load regulation (note 4) v rload i out =0.1ma to 150ma 1 6 mv 14 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =0 a 95 130 a 150 v en 2.0v, i out =100 a 98 140 160 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =100ma 600 1000 1500 v en 2.0v, i out =150ma 1300 1900 2500 ripple rejection psrr frequency=100hz, i out =100 a75 db current limit i limit v out =0v 320 550 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low vo l t a g e v il regulator shutdown 0.4 v 0.18 hz nv / ap2202-2.8 electrical characteristics electrical characteristics (continued) v in =3.8v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 13 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited electrical characteristics (continued) ap2202-2.8 electrical characteristics parameter symbol conditions min typ max unit enable input logic-high vo l t a g e v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v ih 2.0v 5 20 a v ih 2.0v 25 thermal resistance jc sot-23-5 63.4 o c/w sot-89 50 note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the wors t case voltage change divi ded by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycle pulse testing. parts are tested for load regulation in the load range from 0.1ma to 150ma. changes in output voltage due to heating effects are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differentia l at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is th e regulator quiescent current pl us pass transistor base current . the total current drawn from t he supply is the sum of the load current plus the ground pin current. v in =3.8v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 14 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 40 ppm/ o c line regulation v rline v in = 4v to 13.2v 14 mv 14 load regulation (note 4) v rload i out =0.1ma to 150ma 1 7 mv 15 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =0 a 95 130 a 150 v en 2.0v, i out =100 a 98 140 160 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =100ma 600 1000 1500 v en 2.0v, i out =150ma 1300 1900 2500 ripple rejection psrr frequency=100hz, i out =100 a75 db current limit i limit v out =0v 320 550 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low vo l t a g e v il regulator shutdown 0.4 v 0.18 hz nv / ap2202-3.0 electrical characteristics electrical characteristics (continued) v in =4v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 15 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited electrical characteristics (continued) ap2202-3.0 electrical characteristics parameter symbol conditions min typ max unit enable input logic-high vo l t a g e v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v ih 2.0v 5 20 a v ih 2.0v 25 thermal resistance jc sot-23-5 63.4 o c/w sot-89 50 note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at consta nt junction temperature using low duty cycl e pulse testing. parts are tested for load regulation in the load range from 0.1ma to 150ma. changes in output vo ltage due to heating effect s are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value meas ured at 1v differential. note 6: ground pin current is the regulator quiescent current plus pass transistor base current. the total current drawn from t he supply is the sum of the load cu rrent plus the ground pin current. v in =4v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 16 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit output voltage accuracy ? v out /v out variation from specified v out -1 1 % -2 2 output voltage temperature coefficient (note 3) ? v out / ? t 120 v/ o c ( ? v out /v out )/ ? t 36.3 ppm/ o c line regulation v rline v in = 4.3v to 13.2v 15 mv 15 load regulation (note 4) v rload i out =0.1ma to 150ma 1 8 mv 17 dropout voltage (note 5) v drop i out =100 a 15 50 mv 70 i out =50ma 110 150 230 i out =100ma 140 250 300 i out =150ma 165 275 350 standby current i std v en 0.4v (shutdown) 0.01 1 a v en 0.18v (shutdown) 5 ground pin current (note 6) i gnd v en 2.0v, i out =0 a 95 130 a 150 v en 2.0v, i out =100 a 98 140 160 v en 2.0v, i out =50ma 350 600 800 v en 2.0v, i out =100ma 600 1000 1500 v en 2.0v, i out =150ma 1300 1900 2500 ripple rejection psr r frequency=100hz, i out =100 a75 db current limit i limit v out =0v 320 550 ma output noise e no i out =50ma, c out =2.2 f, 100pf from byp to gnd 260 enable input logic-low vo l t a g e v il regulator shutdown 0.4 v 0.18 hz nv / ap2202-3.3 electrical characteristics electrical characteristics (continued) v in =4.3v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 17 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited electrical characteristics (continued) ap2202-3.3 electrical characteristics parameter symbol conditions min typ max unit enable input logic-high vo l t a g e v ih regulator enabled 2.0 v enable input logic-low current i il v il 0.4v 0.01 1 a v il 0.18v 2 enable input logic-high current i ih v ih 2.0v 5 20 a v ih 2.0v 25 thermal resistance jc sot-23-5 63.4 o c/w sot-89 50 note 2: specifications in bold type are limited to -40 o c t j 125 o c. limits over temperature are guaranteed by design, but not tested in production. note 3: output voltage temperature coeffi cient is defined as the worst case voltage change divided by the total temperature range. note 4: regulation is measured at constant junction temperature using low duty cycle pulse testing. parts are tested for load regulation in the load range from 0.1ma to 150ma. changes in out put voltage due to heating effe cts are covered by the thermal regulation specification. note 5: dropout voltage is defined as the input to output differential at which the output voltage drops 1% (t j =25 o c) or 2% (- 40 o c t j 125 o c) below its nominal value measured at 1v differential. note 6: ground pin current is the regulato r quiescent current plus pass transistor ba se current. the total current drawn from t he supply is the sum of the load current plus the ground pin current. v in =4.3v, i out =100 a, c in =1.0 f, c out =2.2 f, v en 2.0v, t j =25 o c, bold typeface applies over -40 o c t j 125 o c (note 2), unless otherwise specified.
150ma rf uldo regulator ap2202 data sheet 18 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited typical performance characteristics figure 4. output voltage vs. junction temperature -60 -40 -20 0 20 40 60 80 100 120 140 2.700 2.725 2.750 2.775 2.800 2.825 2.850 2.875 2.900 output voltage (v) junction temperature ( o c) ap2202-2.8 v in =3.8v, i out =10ma c in =1.0 f, c out =2.2 f figure 5. dropout voltage vs. junction temperature -60 -40 -20 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 350 dropout voltage (mv) junction temperature ( o c) i out =50ma i out =100ma i out =150ma c in =1.0 f, c out =2.2 f figure 6. ground pin curr ent vs. output current figure 7. ground pin current vs. junction temperature -60 -40 -20 0 20 40 60 80 100 120 140 -2000 -1000 0 1000 2000 3000 4000 5000 ap2202-2.8 i out =50ma i out =100ma i out =150ma v in =3.8v,v en =2.0v c in =1.0 f, c out =2.2 f junction temperature ( o c) ground pin current ( a) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 -4 -3 -2 -1 0 1 2 3 4 5 6 ground pin current (ma) output current (ma) t a =25 o c c in =1.0 f, c out =2.2 f
150ma rf uldo regulator ap2202 data sheet 19 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited 10 100 1k 10k 100k 1m 10m 0.001 0.01 0.1 1 output noise ( ) frequency (hz) ap2202-2.8 c in =1.0 f, c out =2.2 f, c byp =100pf v in =4.5v, i out =10ma 10 figure 8. enable current vs . junction temperature figure 9. enable voltage vs. junction temperature -60 -40 -20 0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20 v en =1.8v v en =2.0v v en =3.0v v en =4.0v v in =3.8v, c in =1.0 f c out =2.2 f, i out =100 a enable current ( a) junction temperature ( o c) ap2202-2.8 -60 -40 -20 0 20 40 60 80 100 120 140 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 junction temperature ( o c) enable voltage (v) ap2202-2.8 v en =on v en =off c in =1.0 f,c out =2.2 f v in =3.8v,i out =5ma typical performance ch aracteristics (continued) figure 10. noise vs. bypass capacitor 10 100 1000 10000 0 50 100 150 200 noise ( vrms) bypass capacitor (pf) i out =10ma c in =1.0 f, c out =2.2 f noise measurement filter: din noise figure 11. output noise vs. frequency v/ hz
150ma rf uldo regulator ap2202 data sheet 20 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited figure 13. line transient (conditions: v in =3.8v to 4.8v, v en =2v, i out =100 a c byp =100pf, c out =10 f ) time ( s) figure 14. v en (on) vs. v out (conditions: v en =0v to 2v, v in =3.8v, i out =30ma, c byp =open, c in =1.0 f, c out =2.2 f ) v en (v) time ( s) ap2202-2.8 ap2202-2.8 figure 15. psrr vs. frequency 0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 500 600 700 800 900 1000 2.8 3.8 4.8 5.8 0 -60 -40 -20 0 2 1 3 -1 -2 0 4 2 20 typical performance ch aracteristics (continued) figure 12. load transient (conditions: v in =3.8v, c byp =100pf, v en =2v, i out =5ma to 50ma, c in =1.0 f, c out =2.2 f ) i out (ma) ? v out (mv) time ( s) ap2202-2.8 0 1020304050 60708090100 -50 0 50 0 50 100 150 -100 ? v out (mv) v in (v) v out (v) 10 100 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) ap2202-2.8 v in =3.8v, v ripple =1v pp i out =10ma, c out =2.2 f
150ma rf uldo regulator ap2202 data sheet 21 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 power dissipation (w) ambient temperature ( o c) sot-23-5 package no heatsink typical performance ch aracteristics (continued) figure 16. power dissipation vs. ambient temperature 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 power dissipation (w) ambient temperature ( o c) sot-89 package no heatsink figure 17. power dissipation vs. ambient temperature figure 18. esr vs. output current 0 25 50 75 100 125 150 0.01 0.1 1 10 100 c out =1.0 f no bypass capacitor stable area output current (ma) esr ( ? ) figure 19. esr vs. output current 0 25 50 75 100 125 150 0.01 0.1 1 10 100 esr ( ? ) output current (ma) stable area c out =2.2 f no bypass capacitor
150ma rf uldo regulator ap2202 data sheet 22 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 20. esr vs. output current 0 25 50 75 100 125 150 0.01 0.1 1 10 100 output current (ma) esr ( ? ) stable area c out =4.7 f no bypass capacitor
150ma rf uldo regulator ap2202 data sheet 23 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited figure 21. typical application of ap2202 (note 7) byp 100pf en gnd ap2202-2.8 v in =3.8v v out =2.8v 2.2 f 1.0 f v in v in v out v out c out c byp c in typical application adj en gnd ap2202-adj r1 r2 optional v out =1.25* (1+r2/r1) v in 1.0 f 2.2 f v in c in v out v out c out c byp note 7: dropout voltage is 165mv when t a =25 o c. in order to obtain a normal output voltage, v out +0.165v is the minimum input voltage which will result a low ps rr, imposing a bad influenc e on system. therefore, the recommended input voltage is v out +0.5v to 13.2v. for ap2202-2.8 version, it s input voltage can be set from 3.3v(v out +0.5v) to 13.2v. for that of adj version, any value from v out +0.5v to 13.2v is available. r1 and r2 must be correctly selected when setting the output voltage. for example, if 3.0v output voltage is required, r1 and r2 can be set to 10k ? and 14k ? respectively. for adj ver- sion, we recommend 2.3v as minimum output voltage.
150ma rf uldo regulator ap2202 data sheet 24 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited input capacitor a 1 f minimum capacitor is recommended to be placed between v in and gnd. output capacitor it is required to prevent oscillation. 1.0 f minimum is recommended when c byp is unused. 2.2 f mini- mum is recommended when c byp is 100pf. the out- put capacitor may be increas ed to improve transient response. noise bypass capacitor bypass capacitor is connected to the internal voltage reference. a 100pf capacitor connected from byp to gnd make this reference quiet, resulting in a significant reduction in output noise, but the esr stable area will be narrowed. the start-up speed of the ap2202 is inversely proportional to the value of reference bypass capacitor. in some cases, if output noise is not a major concern and rapid turn-on is necessary, omit c byp and leave byp open. power dissipation thermal shutdown may take place if exceeding the maximum power dissipation in application. under all possible operating conditions, the junction tempera- ture must be within the range specified under abso- lute maximum ratings to avoid thermal shutdown. to determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 16,17), using: t j = p d * ja + t a p d =(v in -v out )*i out +v in *i gnd where: t j t j(max) , t j(max) is absolute maximum rat- ings for the junction temperature; v in *i gnd can be ignored due to its small value. t j(max) is 150 o c , ja is 200 o c /w for sot-23-5 pack- age and 165 o c /w for sot-89 package, no heatsink is required since the package alone will dissipate enough heat to satisfy these requirements unless the calculated value for power dissipation exceeds the limit. example: for 2.8v version packaged in sot-23-5, i out =150ma, t a =50 o c, v in(max) is: (150 o c -50 o c )/(0.15a*200 o c/w )+2.8v=6.133v therefore, for good performance, please make sure that input voltage is less than 6.133v without heat- sink when t a =50 o c. application information
150ma rf uldo regulator ap2202 data sheet 25 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited mechanical dimensions sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
150ma rf uldo regulator ap2202 data sheet 26 may. 2010 rev. 2. 1 bcd semiconductor manufacturing limited mechanical dimens ions (continued) sot-89 unit: mm(inch) 1.400(0.055)* 1.630(0.064) 4.400(0.173) 0.360(0.014) 0.440(0.017) 3.000(0.118) 0 . 9 0 0 ( 0 . 0 3 5 ) 2 . 3 0 0 ( 0 . 0 9 1 ) 3 . 9 5 0 ( 0 . 1 5 6 ) 1.400(0.055) 0.360(0.014) 1 0 3 1 0 r0.200(0.008) r0.150(0.006) 0 . 0 0 0 ( 0 . 0 0 0 ) 3 1.600(0.063) 0.440(0.017) 0.560(0.022) 2 . 6 0 0 ( 0 . 1 0 2 ) 0.520(0.020) 4.600(0.181) 1.830(0.072) 1 . 2 0 0 ( 0 . 0 4 7 ) 4 . 2 5 0 ( 0 . 1 6 7 ) 0 . 0 7 6 ( 0 . 0 0 3 ) 0.360(0.014) 0.480(0.019)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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